absolute maximum ratings ( tj = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave,50 to 60hz 600 v i t(rms) r.m.s on-state current 180 conduction angle 12 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive 12 0 a di/dt critical rate of rise of on-state current i pk = 20a, igt =20ma 50 a /us p g(av) forward average gate power dissipation tj=110 c 0.5 w t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c may, 2010 , rev. 1 1/5 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 12 a ) i solated type general description apollo electrons scr is suitable for the application where requiring high bidirectional blocking voltage capability and also suit able for over voltage protection, mo tor control circuit in power tool, inrush cur- rent limit circuit and heating control system. 2. anode 3.gate 1.cathode symbol i t(rms) = 1 2 a i tsm = 1 2 0a bv drm = 600v copyright @ apollo electron co., ltd. all rights reserved. standard gate silicon controlled rectifiers CP10C60 1 2 3 to-220f
electrical characteristics ( t j = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current vd = v drm -- 2 ma v tm peak on-state voltage (1) i t = 1 2 a 1.7 v i gt gate trigger current (2) vd = 12 v, rl=100 20 ma v gt gate trigger voltage (2) vd = 12 v, rl=100 --- --- 1.3 v dv/dt critical rate of rise off-state voltage linear slope up to v d = v drm 67% , gate open tj=110c 20 v/us i h holding current vd=24v, igt=50ma --- --- 30 ma vd = 24v, i gt=50ma 5 ma 2/5 CP10C60 CP10C60
-50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance [ o c/w] time (sec) 0.51.01.52.02.53.03.5 10 0 10 1 10 2 125 o c 25 o c on-state current [a] on-state voltage [v] 012345678 40 60 80 100 120 140 160 = 180 o max. allowable case temperature [ o c] average on-state current [a] 10 -1 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 i gm (2a) v gd (0.2v) p g(av) (0.5w) p gm (5w) v gm (5v) 25 o c gate voltage [v] gate current [ma] : conduction angl e 360 2 CP10C60 -50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature[ o c] 3/5 fig 1. gate characteristics fi g 2. maximum case temperature fig 3. typical forward voltage fig 4. thermal response fig 6. typical gate trigger current vs. junction temperature fig 5. typical gate trigger voltage vs. junction temperature
01234567 0 2 4 6 8 10 = 30 o = 60 o = 90 o = 120 o = 180 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] 4/5 CP10C60 fig 8. power dissipation fig 7. typical holding current
to-220 package dimension 5/5 CP10C60 min max min max a 0.14 0.19 3.56 4.83 a1 0.02 0.055 0.51 1.4 a2 0.08 0.115 2.03 2.92 b 0.015 0.04 0.38 1.02 b2 0.045 0.07 1.14 1.78 c 0.014 0.024 0.36 0.61 d 0.56 0.65 14.22 16.51 e 0.096 0.104 2.44 2.64 e 0.38 0.42 9.65 10.67 h1 0.23 0.27 5.84 6.86 l 0.5 0.58 12.7 14.73 l1 - 0.25 - 6.35 p 0.139 0.161 3.53 4.09 q 0.1 0.135 2.54 3.43 inches millimeters dim
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